收藏本站
DMG4800LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Mechanical Data
?
?
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
?
?
?
?
?
?
?
?
Case: DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
Polarity: See Diagram
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.0172 grams (approximate)
8
7
6
5
5
6
7
8
D
G
S
S
S
1
2
3
4
4
3
2
1
TOP VIEW
BOTTOM VIEW
TOP VIEW
Internal Schematic
BOTTOM VIEW
Pin Configuration
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
± 25
Units
V
V
Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Steady
State
T A = 25°C
T A = 85°C
I D
I DM
7.44
4.82
40
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J, T STG
Value
0.94
133
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
1 of 6
www.diodes.com
November 2009
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMG4800LK3-13 MOSFET N-CH 30V 10A TO252
DMG4800LSD-13 MOSFET 2N-CH 30V 8.54A SO8
DMG4822SSD-13 MOSFET DL N-CH 30V 10A SO-8
DMG4932LSD-13 MOSFET 2N-CH 30V 9.5A SO8
DMG5802LFX-7 MOSFET N-CH DUAL 24V DFN5020-6
DMG6602SVT-7 MOSFET N/P-CH 30V TSOT23-6
DMG6898LSD-13 MOSFET 2N-CH 20V 9.5A SO8
DMG6968U-7 MOSFET N-CH 20V 6.5A SOT-23
相关代理商/技术参数
DMG4800LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4800LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4800LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4800LSD-13 功能描述:MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4800LSDQ-13 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 31V-40V SO-8 T&R 2.5K - Tape and Reel
DMG4812SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
DMG4812SSS-13 功能描述:两极晶体管 - BJT MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
DMG4822SSD 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W DIO 30V 10A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIO, 30V, 10A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIO, 30V, 10A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0134ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.42W ;RoHS Compliant: Yes